Electron Devices and Circuits for BE Anna University R21CBCS (III-EEE - EC3301)

Rs. 495.00
Tax included. Shipping calculated at checkout.

Unit I PN Junction Devices PN junction diode - structure, operation and V-I characteristics, diffusion and transition capacitance - Clipping & Clamping circuits - Rectifiers - Half Wave and Full Wave Rectifier, - Display devices - LED, Laser diodes, Zener diode characteristics - Zener diode Reverse characteristics - Zener diode as regulator. (Chapter - 1) UNIT II Transistors and Thyristors BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristors and IGBT - Structure and characteristics. (Chapters - 2, 3, 4, 5) UNIT III Amplifiers BJT small signal model - Analysis of CE, CB, CC amplifiers- Gain and frequency response - MOSFET small signal model - Analysis of CS and Source follower - Gain and frequency response - High frequency analysis. (Chapters - 6, 7) UNIT IV Multistage Amplifiers and Differential Amplifier BIMOS cascade amplifier, Differential amplifier - Common mode and Difference mode analysis - FET input stages - Single tuned amplifiers - Gain and frequency response – Neutralization methods, power amplifiers - Types (Qualitative analysis). (Chapter - 8) UNIT V Feedback Amplifiers and Oscillators Advantages of negative feedback - voltage / current, series, Shunt feedback - positive feedback - Condition for oscillations, phase shift - Wien bridge, Hartley, Colpitts and Crystal oscillators. (Chapters - 9, 10)

Pickup available at Amit Warehouse

Usually ready in 1 hour

Check availability at other stores
Author: [A.P.Godse, U.A.Bakshi] Pages: 508 Edition: 2022 Vendors: Technical Publications