Syllabus Basic Electronics Engineering Total Credits L+T+ (PR/2) Assessment Pattern and Marks Total Marks C Theory Tutorial / Practical ESE (E) PA / CA (M) PA/CA (I) ESE (V) 4 70 30 20 30 150 Unit No. Content 1. Semiconductor Diodes : p-n junction diode, Characteristics and parameters, Diode approximations, DC load line analysis, Temperature effects, Diode AC models, Diode specifications, Diode testing, Zener diodes. (Chapter - 1) 2. Diode Applications : Half-wave and Full-wave rectifiers, Power supply, RC and LC power supply filters, Zener diode voltage regulators, Series and shunt clipping circuits, Clamping circuits, DC voltage multipliers. (Chapter - 2) 3. Bipolar Junction Transistors : BJT operation, BJT voltages and currents, BJT amplification, BJT switching, CB, CE and CC characteristics, Transistor testing. (Chapter - 3) 4. BJT biasing : DC load line and bias point, Base bias, Collector-to-base bias, Voltage- divider bias, Comparison of basic bias circuits, Bias circuit design. (Chapter - 4) 5. AC analysis of BJT circuits : Coupling and bypass capacitors, AC load lines, transistor models and parameters, CE circuit analysis, CE circuit with unbypassed emitter resistor, CC circuit analysis, CB circuit analysis, Comparison of CE, CB and CC circuits. (Chapter - 5) 6. Field Effect Transistors : Junction Field Effect Transistors, JFET characteristics, JFET data sheets and parameters, FET amplification and switching, MOSFETs. (Chapter - 6) 7. FET biasing : DC load line and bias point, Gate bias, Self bias, Voltage divider bias, Comparison of basic JFET bias circuits. (Chapter - 7) 8. Special Purpose Diodes : Light Emitting Diode(LED), Photo diode, Solar cell, PIN diode, Varactor diode, Schottky diode, Tunnel diode, Seven segment display. (Chapter - 8)
